elektronische bauelemente BCP1213 pnp epitaxial planar transistor 01-june-2004 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a e c d b k h f g l j rohs compliant product a suffix of ?-c? specifies halogen & lead-free features the BCP1213 is designed for using in power amplifier applications or power switching applications. marking ny absolute maximum ratings at ta = 25 c parameter symbol ratings unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current i c -2 a base current i b -0.4 a 500 mw collector power dissipation p c (note 1) 1000 mw junction & storage temperature t j , t stg 150, -55~150 c note 1: mounted on ceramic substrate (250mm 2 x0.8t) electrical characteristics at ta = 25 c parameter symbol min. max. unit test conditions collector-emitter breakdown voltage v (br)ceo -50 - v i c = -10 ma, i b = 0 collector cut-off current i cbo - -100 na v cb = -50 v, i e = 0 emitter cut-off current i ebo - -100 na v eb = -5 v, i c = 0 h fe(1) 70 240 v ce = -2 v, i c = -0.5 a dc current gain. h fe(2) 20 - v ce = -2 v, i c = -2.0 a base-emitter voltage v be(sat) - -1.2 v i c = -1 a, i b = -0.05 a collector-emitter saturation voltage v ce(sat) - -0.5 v i c = -1 a, i b = -0.05 a transition frequency f t 120 typ. mhz v ce = -2 v, i c = -0.5 a collector output capacitance c ob 40 pf v cb = -10 v, i e = 0, f = 1 mhz turn-on time t on 0.1 s storage time t stg 1.0 s switching time fall time t f 0.1 s classification of hfe rank o y hfe 70 ? 140 120 - 240 millimete r millimete r ref. min. max. ref. min. max. a 4.40 4.60 g - - b 4.05 4.25 h 1.50 ref. c 1.40 1.60 j 3.00 ref. d 2.40 2.60 k 0.40 0.52 e 1.50 1.70 l 0.35 0.41 f 0.89 1.20 sot-89 type name hfe ranking www..net
elektronische bauelemente BCP1213 pnp epitaxial planar transistor 01-june-2004 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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